2SK3669 Toshiba Semiconductor, 2SK3669 Datasheet - Page 4
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2SK3669
Manufacturer Part Number
2SK3669
Description
Silicon N-Channel MOS Type Switching Regulator
Manufacturer
Toshiba Semiconductor
Datasheet
1.2SK3669.pdf
(6 pages)
www.DataSheet4U.com
3000
1000
250
200
150
100
500
300
100
50
50
30
10
25
20
15
10
−80
0
5
3
0.1
5
0
0
Common source
Tc = 25°C
f = 1 MHz
V GS = 0 V
Common source
V GS = 10 V
Pulse test
0.3
−40
Drain-source voltage V
Case temperature Tc (°C)
Case temperature Tc (°C)
40
1
Capacitance – V
0
R
DS (ON)
3
P
D
40
80
– Tc
2.5
10
– Tc
80
DS
DS
5 A
30
I D = 10 A
120
(V)
120
100
C oss
C iss
C rss
160
160
300
4
100
100
0.1
10
10
80
60
40
20
−80
1
8
6
4
2
0
0
0
0
V DS
Dynamic input/output characteristics
−40
0.5
Drain-source voltage V
3
10
1
Case temperature Tc (°C)
Total gate charge Q
5
V GS = 0, −1 V
0
V GS
I
1
DR
V
th
40
– V
10
– Tc
DS
1.5
g
Common source
V DS = 10 V
I D = 1 mA
Pulse test
80
Common source
Tc = 25°C
Pulse test
DS
Common source
I D = 10 A
V DD = 80 V
Tc = 25°C
Pulse test
(nC)
15
(V)
2
120
2006-11-20
2SK3669
160
2.5
20
25
20
15
10
5
0