2SK3669 Toshiba Semiconductor, 2SK3669 Datasheet - Page 3
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2SK3669
Manufacturer Part Number
2SK3669
Description
Silicon N-Channel MOS Type Switching Regulator
Manufacturer
Toshiba Semiconductor
Datasheet
1.2SK3669.pdf
(6 pages)
www.DataSheet4U.com
0.5
0.3
0.1
20
16
12
10
50
30
10
8
6
4
2
0
8
4
0
5
3
1
0.1
0
0
Common source
Tc = 25°C
Pulse test
0.4
Drain-source voltage V
Gate-source voltage V
4
100
15
Drain current I
1
0.8
8
⎪Y
I
I
D
D
Ta = −55°C
Tc = −55°C
25
fs
– V
– V
⎪ – I
10
DS
GS
9
1.2
D
12
D
25
10
GS
DS
(A)
8.5
Common source
V DS = 10 V
Pulse test
100
Common source
V DS = 10 V
Pulse test
(V)
(V)
1.6
V GS = 6.5 V
16
7.5
8
7
100
2.0
20
3
0.05
0.03
0.01
2.0
1.6
1.2
0.8
0.4
0.5
0.3
0.1
20
16
12
8
4
0
0
5
3
1
0.1
0
0
15
Drain-source voltage V
2
4
Gate-source voltage V
10
100
9.5
Drain current I
1
R
V GS = 10 V
V
DS (ON)
4
8
I
DS
D
15
– V
– V
9
DS
GS
– I
12
8.5
6
D
D
10
GS
DS
(A)
Common source
Tc = 25°C
Pulse test
Common source
Tc = 25°C
Pulse test
Common source
Tc = 25°C
Pulse test
I D = 10 A
(V)
(V)
V GS = 6.5 V
16
8
2.5
5
7.5
2006-11-20
8
2SK3669
100
10
20