Si4511DY-T1 Vishay Siliconix, Si4511DY-T1 Datasheet - Page 5

• Manufacturer Part Number: Si4511DY-T1
• Description: N- and P-Channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Document Number: 72223
S-41496—Rev. B, 09-Aug-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
40
32
24
16
0.01
0.01
8
0
0.1
0.1
0.0
2
1
2
1
10
10
V
GS
−4
−4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
= 5 thru 3.5 V
0.4
V
DS
Output Characteristics
− Drain-to-Source Voltage (V)
10
0.8
−3
Single Pulse
10
−3
Normalized Thermal Transient Impedance, Junction-to-Ambient
1.2
Normalized Thermal Transient Impedance, Junction-to-Foot
10
−2
1.6
2.5 V
1.5 V
3 V
2 V
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
2.0
10
−2
10
−1
10
1
−1
40
32
24
16
8
0
0.0
0.5
V
10
GS
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
Transfer Characteristics
DM
1.0
JM
− Gate-to-Source Voltage (V)
− T
t
1
A
1
= P
1.5
t
2
DM
Vishay Siliconix
Z
thJA
100
T
thJA
2.0
t
t
C
25_C
1
2
(t)
= −55_C
= 85_C/W
N−CHANNEL
Si4511DY
P-CHANNEL
2.5
www.vishay.com
600
10
125_C
3.0
3.5
5