Si4511DY-T1 Vishay Siliconix, Si4511DY-T1 Datasheet - Page 6

• Manufacturer Part Number: Si4511DY-T1
• Description: N- and P-Channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Si4511DY
Vishay Siliconix
www.vishay.com
6
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.10
0.08
0.06
0.04
0.02
0.00
40
10
5
4
3
2
1
0
1
0.0
0
0
V
V
I
D
GS
DS
Source-Drain Diode Forward Voltage
= 6.2 A
= 4.5 V
On-Resistance vs. Drain Current
= 10 V
3
0.3
8
V
SD
T
Q
J
g
= 150_C
− Source-to-Drain Voltage (V)
I
D
− Total Gate Charge (nC)
6
− Drain Current (A)
Gate Charge
0.6
16
9
0.9
24
T
V
12
J
GS
= 25_C
= 2.5 V
1.2
32
15
1.5
40
18
3000
2500
2000
1500
1000
0.10
0.08
0.06
0.04
0.02
0.00
500
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
V
I
rss
−25
D
GS
= 6.2 A
= 4.5 V
1
4
T
V
V
0
C
J
DS
GS
oss
− Junction Temperature (_C)
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
25
Capacitance
2
8
50
S-41496—Rev. B, 09-Aug-04
C
I
12
D
3
iss
Document Number: 72223
75
= 6.2 A
P-CHANNEL
100
16
4
125
150
20
5