Si4511DY-T1 Vishay Siliconix, Si4511DY-T1 Datasheet - Page 7

• Manufacturer Part Number: Si4511DY-T1
• Description: N- and P-Channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Document Number: 72223
S-41496—Rev. B, 09-Aug-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.2
−0.4
0.6
0.4
0.2
0.0
0.01
0.1
−50
2
1
10
−4
−25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
I
T
Threshold Voltage
D
J
= 250 mA
− Temperature (_C)
25
10
−3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
1
10
100
0.1
−2
Limited
I
D(on)
125
Single Pulse
T
r
C
DS(on)
Square Wave Pulse Duration (sec)
V
= 25_C
DS
150
− Drain-to-Source Voltage (V)
Safe Operating Area
Limited
10
1
−1
BV
DSS
Limited
10
1
I
DM
30
25
20
15
10
5
0
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
10
Limited
−2
100
10
10
−1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Single Pulse Power
− T
t
A
Time (sec)
1
1
= P
t
2
Vishay Siliconix
DM
Z
thJA
thJA
100
t
t
1
2
(t)
10
= 85_C/W
Si4511DY
P-CHANNEL
www.vishay.com
100
600
600
7