2SJ553 Hitachi Semiconductor, 2SJ553 Datasheet

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2SJ553

Manufacturer Part Number
2SJ553
Description
Silicon P Channel MOS FET High Speed Power Switching
Manufacturer
Hitachi Semiconductor
Datasheet

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Features
Outline
Low on-resistance
R
Low drive current.
4V gate drive devices.
High speed switching.
DS(on)
= 0.028 typ.
2SJ553(L),2SJ553(S)
G
High Speed Power Switching
LDPAK
Silicon P Channel MOS FET
D
S
1
2
3
4
1
2
1. Gate
2. Drain
3. Source
4. Drain
3
4
ADE-208-650B (Z)
3rd. Edition
Jun 1998

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2SJ553 Summary of contents

Page 1

... Features Low on-resistance R = 0.028 typ. DS(on) Low drive current. 4V gate drive devices. High speed switching. Outline G Silicon P Channel MOS FET High Speed Power Switching LDPAK ADE-208-650B (Z) 3rd. Edition Gate 2. Drain 3. Source 4. Drain Jun 1998 ...

Page 2

... Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current I Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note duty cycle 2. Value Value at Tch = ...

Page 3

... V –40 Pulse Test –30 –3 V –20 –10 –2.5 V – –6 –8 –10 V (V) DS 2SJ553(L),2SJ553(S) Maximum Safe Operation Area Operation in this area is limited by R DS(on °C –1 –10 Drain to Source Voltage V DS Typical Transfer Characteristics V = – Pulse Test 25 ° ...

Page 4

... Drain to Source Saturation Voltage vs. Gate to Source Voltage –5 –4 –3 –2 –1 – –4 –8 Gate to Source Voltage Static Drain to Source on State Resistance vs. Temperature 0.1 Pulse Test 0. – 0. – 0.04 0. – – Case Temperature 4 Static Drain to Source on State Resistance ...

Page 5

... Drain to Source Voltage V 0 1000 V DS 500 –4 200 –8 100 –12 50 –25 V –50 V –16 20 –20 10 –0.1 –0.3 160 200 2SJ553(L),2SJ553(S) Typical Capacitance vs. Drain to Source Voltage MHz Ciss Coss Crss –10 –20 –30 –40 –50 (V) DS Switching Characteristics t d(off ...

Page 6

... Reverse Drain Current vs. Source to Drain Voltage –50 –40 –30 –10 V –20 –10 0 –0.4 –0.8 Source to Drain Voltage Avalanche Test Circuit V DS Monitor Rg Vin 50 – 100 Pulse Test 80 – –1.2 –1.6 –2 Monitor D ...

Page 7

... Switching Time Test Circuit Vin Monitor D.U. Vin 50 = – – c( (t) • ch – 1.67 °C/ ° 100 m Pulse Width PW (S) Vout Vin Monitor 10% DD Vout td(on) 2SJ553(L),2SJ553( 25°C ch – Waveform 90% 90% 90% 10% 10% td(off ...

Page 8

... Package Dimensions 10.2 ± 0.3 1.27 ± 0.2 1.2 ± 0.2 +0.2 0.86 –0.1 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 L type 8 4.44 ± 0.2 1.3 ± 0.2 10.2 ± 0.3 2.59 ± 0.2 1.2 ± 0.2 0.4 ± 0.1 2.54 ± 0.5 4.44 ± 0.2 1.3 ± 0.2 +0.2 0.1 –0.1 2.59 ± 0.2 1.27 ± 0.2 0.4 ± 0.1 +0.2 0.86 –0.1 2.54 ± 0.5 S type LDPAK Hitachi Code EIAJ JEDEC Unit: mm — — ...

Page 9

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

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