2SJ553 Hitachi Semiconductor, 2SJ553 Datasheet - Page 4

• Manufacturer Part Number: 2SJ553
• Description: Silicon P Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

2SJ553(L),2SJ553(S)
4
0.08
0.06
0.04
0.02
0.1
–40
–5
–4
–3
–2
–1
0
Static Drain to Source on State Resistance
0
Drain to Source Saturation Voltage vs.
–10 A
V
Pulse Test
Gate to Source Voltage
GS
V
Case Temperature
GS
= –4 V
–4
0
Gate to Source Voltage
I
= –10 V
D
vs. Temperature
= –50 A
–8
40
–12
–10 A
80
I = –50 A
D
Pulse Test
Tc
–20 A
V
–10,–20A
–20 A
–16
120
GS
(°C)
–50 A
(V)
160
–20
0.05
0.02
0.01
0.2
100
0.5
0.1
0.3
0.1
30
10
Static Drain to Source on State Resistance
1
–0.1
3
1
–1
Forward Transfer Admittance vs.
V
–0.3
–3
GS
Drain Current I
Drain Current
Tc = –25 °C
= –4 V
–10
vs. Drain Current
–10 V
–1
Drain Current
75 °C
–30
–3
–100 –300 –1000
V
Pulse Test
–10
I
D
D
DS
Pulse Test
(A)
25 °C
(A)
= –10 V
–30
–100