2SJ553 Hitachi Semiconductor, 2SJ553 Datasheet - Page 3

• Manufacturer Part Number: 2SJ553
• Description: Silicon P Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

Main Characteristics
–50
–40
–30
–20
–10
80
60
40
20
0
0
Drain to Source Voltage
Case Temperature
Power vs. Temperature Derating
Typical Output Characteristics
–2
50
V
GS
–5 V
–8 V
–4 V
= –10 V
–4
100
–6
Tc (°C)
Pulse Test
150
–2.5 V
V
–3.5 V
–2 V
–3 V
–8
DS
(V)
–10
200
–1000
–100
–0.1
–50
–40
–30
–20
–10
–10
–1
–0.1
0
Ta = 25 °C
V
Drain to Source Voltage
Pulse Test
Gate to Source Voltage
DS
Typical Transfer Characteristics
Maximum Safe Operation Area
Operation in
this area is
limited by R
–1
Tc = 75 °C
= –10 V
–1
2SJ553(L),2SJ553(S)
–2
DS(on)
–3
–10
25 °C
-25 °C
V
V
GS
–4
DS
(V)
(V)
–100
–5
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