2SJ553 Hitachi Semiconductor, 2SJ553 Datasheet - Page 5

• Manufacturer Part Number: 2SJ553
• Description: Silicon P Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

1000
–100
200
100
500
–20
–40
–60
–80
50
20
10
0.1
0
0
Reverse Drain Current
0.3
Dynamic Input Characteristics
V
Body–Drain Diode Reverse
40
Gate Charge
GS
V
DD
Recovery Time
1
= –10 V
80
–25 V
–50 V
di / dt = 50 A / µs
V
GS
3
V
= 0, Ta = 25 °C
120
DD
Qg (nc)
I = –30 A
10
D
= –10 V
–25 V
–50 V
I
V
DR
160
DS
30
(A)
200
100
0
–4
–8
–12
–16
–20
10000
1000
1000
3000
500
200
100
300
100
30
10
50
20
10
–0.1 –0.3
0
Drain to Source Voltage V
–10
Switching Characteristics
Typical Capacitance vs.
Drain to Source Voltage
Drain Current
V
PW = 5 µs, duty < 1 %
t
–1
GS
d(on)
2SJ553(L),2SJ553(S)
t
–20
t f
r t
d(off)
= –10 V, V
–3
–30
Ciss
–10
I
DD
D
=
V
f = 1 MHz
–40
= –30 V
(A)
Coss
–30 –100
GS
Crss
DS
= 0
(V)
–50
5