TPC8121 Toshiba Semiconductor, TPC8121 Datasheet - Page 3

• Manufacturer Part Number: TPC8121
• Description: Field Effect Transistor Silicon P Channel MOS Type
• Manufacturer: Toshiba Semiconductor

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Drain reverse current
Forward voltage (diode)
Characteristics
Characteristics
Rise time
Turn-ON time
Fall time
Turn-OFF time
Pulse
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
I
Q
I
I
C
|Y
C
C
Q
GSS
DRP
DSS
V
t
t
Q
DSF
on
off
oss
t
gs1
rss
t
iss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
Duty
V
I
I
D
D
D
DR
V
GS
DS
DS
GS
GS
DS
DS
DD
GS
= −10 mA, V
= −10 mA, V
= −11 A
3
= −11 A, V
(Ta = 25°C)
= −30 V, V
= −10 V, I
= −10 V, I
= −10 V, V
≈
= ±20 V, V
= −4 V, I
= −10 V, I
−10 V
≤
−24 V, V
1%, t
0 V
Test Condition
Test Condition
w
D
D
D
= 10 μs
D
GS
GS
GS
DS
GS
= −5.5 A
GS
GS
= −1 mA
= −5.5 A
= −5.5 A
⎯
= 0 V
= 0 V
= 20 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= −10 V,
I
D
V
= −5.5 A
DD
≈
−15 V
V
OUT
−0.8
−30
−13
Min
Min
11
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1770
Typ.
Typ.
400
540
160
16
23
15
65
42
13
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⎯
⎯
⎯
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8
9
5
2009-09-29
TPC8121
±100
Max
−2.0
Max
−10
−44
1.2
24
12
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⎯
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Unit
Unit
mΩ
nC
nA
μA
pF
ns
V
V
S
A
V