TPC8121 Toshiba Semiconductor, TPC8121 Datasheet - Page 5

• Manufacturer Part Number: TPC8121
• Description: Field Effect Transistor Silicon P Channel MOS Type
• Manufacturer: Toshiba Semiconductor

10000
1000
100
1.6
1.2
0.8
0.4
30
24
18
12
−0.1
−80
0
6
2
0
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
Common source
Pulse test
(1)
(2)
V GS = −4 V
−40
Drain−source voltage V
Ambient temperature Ta (
Ambient temperature Ta (
40
V GS = −10 V
Capacitance – V
−1
(1)Device mounted on a glass-epoxy
(2)Device mounted on a glass-epoxy
t = 10 s
0
R
board(a) (Note 2a)
board(b) (Note 2b)
DS (ON)
80
P
−5.5 A
D
40
– Ta
I D = −2.8 A,−5.5A,−11A
– Ta
120
−10
80
DS
DS
−11 A
I D = −2.8 A
160
°
°
C)
(V)
C)
120
C iss
C oss
C rss
−100
160
200
5
−100
−0.1
−1.6
−1.2
−0.8
−0.4
−10
−30
−25
−20
−15
−10
−1
−2
−5
−80
0
0
0
0
−12
V DD = −24 V
−6
Common source
V DS = −10 V
I D = −1mA
Pulse test
−10
Drain−source voltage V
−40
Ambient temperature Ta (
10
Total gate charge Q
V DS
0.3
−3
Dynamic input/output
20
0
characteristics
−5
I
DR
V
−4
−1
th
0.6
– V
40
30
– Ta
V GS
DS
−6
V GS = 0 V
80
40
g
Common source
Ta = 25°C
Pulse test
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DS
Common source
I D = −11 A
Ta = 25°C
Pulse test
−12
0.9
(nC)
V DD = −24 V
°
(V)
120
C)
50
2009-09-29
TPC8121
160
1.2
60
−30
−25
−20
−15
−10
−5
0