TPC8121 Toshiba Semiconductor, TPC8121 Datasheet - Page 4

• Manufacturer Part Number: TPC8121
• Description: Field Effect Transistor Silicon P Channel MOS Type
• Manufacturer: Toshiba Semiconductor

−10
−40
−32
−24
−16
100
0.1
−8
−6
−4
−2
−8
10
−0.1
0
0
1
0
0
Common source
V DS = −10 V
Pulse test
−10
−8
Drain−source voltage V
Gate−source voltage V
−0.06
−1
−6
Ta = −55°C
Ta = 100°C
25°C
Drain current I
−1
−0.12
−2
I
I
|Y
D
D
−5
fs
– V
– V
−55°C
| – I
DS
GS
−4
−0.18
D
−3
25
D
−10
−3.5
GS
(A)
DS
100
Common source
V DS = −10 V
Pulse test
Common source
Ta = 25°C
Pulse test
V GS = −2.5 V
−0.24
−4
(V)
(V)
−3.3
−2.7
−3
−100
−0.3
−5
4
−0.4
−0.3
−0.2
−0.1
100
−40
−32
−24
−16
10
−8
1
−0.1
0
0
0
0
−10
Common source
Ta = 25°C
Pulse test
−8
−5
−6
−2.8
Drain-source voltage V
Gate−source voltage V
−0.4
−4
Drain current I
−1
−4
R
−0.8
V
−8
DS (ON)
I
DS
−5.5
D
V GS = −4 V
– V
−3.7
– V
−10
DS
GS
I D = −11A
−1.2
−12
– I
D
D
−10
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DS
GS
(A)
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
V GS = −2.7V
−1.6
−16
(V)
(V)
−3.5
−3.3
2009-09-29
TPC8121
−3
−100
−20
−2