AN2156 Freescale Semiconductor / Motorola, AN2156 Datasheet - Page 20

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AN2156

Manufacturer Part Number
AN2156
Description
Programming and Erasing FLASH and EEPROM Memories on the MC68HC908AS60A/AZ60A
Manufacturer
Freescale Semiconductor / Motorola
Datasheet
Application Note
EEPROM Functional Description
20
The EEPROM memory on the MC68HC908AS60A/AZ60A physically
consists of two independent 512-byte arrays each with two bytes of
block protection and four bytes of timebase dividers. An erased bit reads
as a logic 1 and a programmed bit reads as a logic 0. Program and erase
operations are facilitated through control bits in memory mapped
registers. Details for these operations appear later in this application
note.
Memory in the EEPROM array can be programmed only one byte (8 bits)
at a time. However, an entire array (512 bytes), a block (128 bytes), or a
single byte can be erased at one time.
The EEPROM memory map on the MC68HC908AS60A/AZ60A, which
includes registers related to EEPROM operation, consists of:
Freescale Semiconductor, Inc.
For More Information On This Product,
$0600–$07FF, EEPROM-2 array, 512 bytes
$0800–$09FF, EEPROM-1 array, 512 bytes
$FE09, configuration write-once register, CONFIG-2
$FE10, EEPROM-1 nonvolatile register, EE1DIVHNVR
$FE11, EEPROM-1 nonvolatile register, EE1DIVLNVR
$FE1A, EEPROM-1 divider high register, EE1DIVH
$FE1B, EEPROM-1 divider low register, EE1DIVL
$FE1C, EEPROM-1 nonvolatile register, EE1NVR
$FE1D, EEPROM-1 control register, EE1CR
$FE1F, EEPROM-1 array configuration register, EE1ACR
$FF70, EEPROM-2 nonvolatile register, EE2DIVHNVR
$FF71, EEPROM-2 nonvolatile register, EE2DIVLNVR
$FF7A, EEPROM-2 divider high register, EE2DIVH
$FF7B, EEPROM-2 divider low register, EE2DIVL
$FF7C, EEPROM-2 nonvolatile register, EE2NVR
$FF7D, EEPROM-2 control register, EE2CR
$FF7F, EEPROM-2 array configuration register, EE2ACR
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MOTOROLA
AN2156

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