AN2156 Freescale Semiconductor / Motorola, AN2156 Datasheet - Page 3

• Manufacturer Part Number: AN2156
• Description: Programming and Erasing FLASH and EEPROM Memories on the MC68HC908AS60A/AZ60A
• Manufacturer: Freescale Semiconductor / Motorola

Memory Overview
AN2156
MOTOROLA
The FLASH cell utilized on the MC68HC908AS60A/AZ60A is an industry
proven split gate cell available from Silicon Storage Technology (SST) in
a 0.5-micron geometry. More information on the FLASH cell is available
at http://www.ssti.com which is SST’s Web site.
The cell uses channel hot electron injection for programming and
Fowler-Nordheim tunneling for erasing. All programming voltages are
generated internally by a charge pump from a single connection to V
With the quick bit programming time and the organization of the FLASH
array into 64-byte rows, the entire 60-Kbyte memory can be
programmed in less than two seconds. The cell has field-proven
reliability and endurance. Motorola already has four devices with this
technology that have been MC qualified per AEC-Q1000 Stress Test.
On the MC68HC908AS60A/AZ60A, the 60-Kbyte memory is separated
into two arrays, each having its own charge pump. Decode logic in the
programming circuitry allows only one array to be programmed at a time.
The EEPROM is a simple extension of the FLASH technology. Motorola
has added a logic state machine around the EEPROM to make the
programming and erasing code of older (0.65- technology) M68HC08
Family devices compatible with these new devices (0.5- technology).
However, a new, faster technique is available for programming/erasing
the EEPROM. By using the AUTO bit in the EEPROM control register,
fixed delays are eliminated. Instead, the software polls for a
program/erase complete flag. A complete description of this technique is
included in
EEPROM Program
Freescale Semiconductor, Inc.
For More Information On This Product,
AUTO Mode EEPROM Erase Operation
Go to: www.freescale.com
Operation.
and
Memory Overview
Application Note
AUTO Mode
DD
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