AN2156 Freescale Semiconductor / Motorola, AN2156 Datasheet - Page 42
![no-image](/images/no-image-200.jpg)
AN2156
Manufacturer Part Number
AN2156
Description
Programming and Erasing FLASH and EEPROM Memories on the MC68HC908AS60A/AZ60A
Manufacturer
Freescale Semiconductor / Motorola
Datasheet
1.AN2156.pdf
(84 pages)
- Current page: 42 of 84
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Application Note
Question 7
Answer 7
Question 8
Answer 8
Question 9
Answer 9
Question 10
Answer 10
Question 11
Answer 11
42
While running the program/erase code in one of the memory arrays, can
the other memory array be programmed/erased?
Yes. The MC68HC908AS60A/AZ60A has two FLASH memory arrays.
One array can be used for executing code while programming/erasing
the other.
Can I program/erase both FLASH arrays at the same time?
No. Each array does have a separate charge pump but the address
decode logic does not allow more than one row to be programmed at a
time.
When writing 64 bytes of data to one row of FLASH memory for
programming, does the order of written data matter?
No, as long as the bytes are written within a row, the data is latched for
the programming operation.
Does programming or erasing the FLASH block protect registers
(FLxBPRs) require V
No, The FLxBPRs can be programed or erased without V
pin. Refer to
I want to perform both page and mass erase operations using the
minimum mass erase time (t
hold time (t
t
delays?
No, there is no erase disturb. However, it may reduce the endurance of
the FLASH memory. Motorola recommends using the minimum time
allowed for both page and mass erase operations.
NVH
Freescale Semiconductor, Inc.
). Does the page operation cause any problems using the mass
For More Information On This Product,
NVHL
Go to: www.freescale.com
FLASH Block
) since these delays cover the page delays (t
HI
on the IRQ pin?
Protection.
MERASE
) and minimum mass high voltage
HI
on the IRQ
ERASE
MOTOROLA
AN2156
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