AN2156 Freescale Semiconductor / Motorola, AN2156 Datasheet - Page 9

• Manufacturer Part Number: AN2156
• Description: Programming and Erasing FLASH and EEPROM Memories on the MC68HC908AS60A/AZ60A
• Manufacturer: Freescale Semiconductor / Motorola

FLASH Control and Block Protect Registers
AN2156
MOTOROLA
Each FLASH array has two registers that control its operation, the
FLASH control register (FLxCR) and the FLASH block protect register
(FLxBPR). See
Two FLASH control registers, FL1CR and FL2CR, are for FLASH-1 and
FLASH-2 arrays, respectively.
HVEN — High-Voltage Enable Bit
MASS — Mass Erase Control Bit
Reset:
Read:
Write:
•
•
This read/write bit enables the charge pump to drive high voltages for
program and erase operations in the array. HVEN can be set only if
either PGM = 1 or ERASE = 1 and the proper sequence for program
or erase is followed.
This read/write bit configures the memory for mass or page erase
operations.
Freescale Semiconductor, Inc.
For More Information On This Product,
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = Mass erase operation selected
0 = Page erase operation selected
$FF88 — FLASH-1 control register (FL1CR)
$FE08 — FLASH-2 control register (FL2CR)
Bit 7
0
0
Figure 1. FLASH Control Register (FLxCR)
Go to: www.freescale.com
Figure 1
= Unimplemented
6
0
0
and
5
0
0
Figure
4
0
0
FLASH Control and Block Protect Registers
2.
HVEN
3
0
MASS
2
0
ERASE
Application Note
1
0
PGM
Bit 0
0
9