RFD10P03L Intersil Corporation, RFD10P03L Datasheet - Page 2

• Manufacturer Part Number: RFD10P03L
• Description: 10A/ 30V/ 0.200 Ohm/ Logic Level/ P-Channel Power MOSFET
• Manufacturer: Intersil Corporation

Absolute Maximum Ratings
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
Electrical Specifications
Source to Drain Diode Specifications
NOTE:
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
(Note 1)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at -5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Source to Drain Forward Voltage
Reverse Recovery Time
1. T
2. Pulse Test: Pulse width
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Derate Above 25
(0.063in (1.6mm) from case for 10s)
J
= 25
o
C to 150
PARAMETER
PARAMETER
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
o
C
GS
= 20K
300 s, Duty Cycle
7-4
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
C
= 25
T
RFD10P03L, RFD10P03LSM, RFP10P03L
C
= 25
o
C, Unless Otherwise Specified
o
C Unless Otherwise Specifie
SYMBOL
SYMBOL
V
Q
r
BV
t
Q
DS(ON)
t
Q
d(OFF)
C
C
2%.
GS(TH)
R
R
I
I
d(ON)
t
g(TOT)
C
t
V
DSS
GSS
OFF
g(TH)
ON
g(-5)
OSS
RSS
ISS
t
DSS
t
t
SD
rr
r
f
JC
JA
I
V
V
V
V
I
I
V
R
(Figure 13)
V
V
V
V
(Figure 15)
RFD10P03L, RFD10P03LSM
RFP10P03L
I
I
D
D
D
SD
SD
GS
DS
GS
GS
DD
GS
GS
GS
DS
GS
= 250 A, V
= 10A, V
= 10A, V
= -10A
= -10A, dI
= -30V,
= -25V, V
= V
= 0V
= 10V
= 15V, I
= 5
= 0 to -10V
= 0 to -5V
= 0 to -1V
DS
J
TEST CONDITIONS
, I
V
GS
GS
TEST CONDITIONS
, T
GS
D
D
DGR
GS
DSS
STG
SD
GS
= -5V (Figures 9, 10)
= -4.5V (Figures 9, 10)
DM
= 250 A (Figure 12)
GS
AS
= -5V
10A, R
/dt = -100A/ s
D
D
L
= 0V (Figure 11)
= 0V, f = 1MHz
T
T
V
R
I
(Figure 14)
g(REF)
C
C
DD
L
= 25
= 150
= 2.4
L
= -24V, I
= 1.5 ,
= -0.25mA
o
C
o
C
RFD10P03L, RFD10P03LSM,
D
10A,
Refer to UIS Curve
See Figure 5
RFP10P03L
-55 to 175
0.43
300
-30
-30
MIN
10
65
-30
10
MIN
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1035
TYP
340
1.2
TYP
15
50
35
20
25
13
35
-
-
-
-
-
-
-
-
-
-
-
-
0.200
0.220
MAX
2.30
100
100
MAX
-50
1.5
100
80
30
16
80
-1.5
-2
-1
-
-
-
-
-
-
-
-
75
UNITS
W/
o
o
UNITS
W
UNITS
V
V
V
A
o
o
o
C
C
o
C/W
C/W
C/W
nC
nC
nC
nA
pF
pF
pF
ns
ns
ns
ns
ns
ns
C
V
V
ns
V
A
A