RFD10P03L Intersil Corporation, RFD10P03L Datasheet - Page 3

• Manufacturer Part Number: RFD10P03L
• Description: 10A/ 30V/ 0.200 Ohm/ Logic Level/ P-Channel Power MOSFET
• Manufacturer: Intersil Corporation

Typical Performance Curves
-100
-10
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
1.2
1.0
0.8
0.6
0.4
0.2
-1
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
-1
0
0
0.01
1.0
2.0
0.1
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
-5
0.05
0.02
0.01
25
TEMPERATURE
0.5
0.2
0.1
V
DS
T
SINGLE PULSE
C
, DRAIN TO SOURCE VOLTAGE (V)
, CASE TEMPERATURE (
50
DS(ON)
75
7-5
10
V
DSS
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-4
-10
MAX = -30V
100
RFD10P03L, RFD10P03LSM, RFP10P03L
o
Unless Otherwise Specified
C)
125
T
T
J
C
= MAX RATED
100 s
100ms
= 25
10ms
1ms
DC
10
-3
o
150
C
t, RECTANGULAR PULSE DURATION (s)
-100
175
10
-2
-100
-10
-12
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
-10
-8
-6
-4
-2
-5
0
10
25
V
-5
V
GS
GS
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FIGURE 5. PEAK CURRENT CAPABILITY
= -10V
= -5V
CASE TEMPERATURE
50
10
10
-4
-1
T
C
, CASE TEMPERATURE (
NOTES: DUTY FACTOR: D = t
PEAK T
75
10
t, PULSE WIDTH (s)
-3
FOR TEMPERATURES ABOVE 25
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
J
= P
100
10
DM
-2
10
I
x Z
P
0
=
DM
I 25
JC
125
10
x R
o
-1
t
175 T
----------------------- -
t
C)
1
2
JC
150
1
–
+ T
/t
2
150
T
C
C
10
C
= 25
0
10
o
1
C
o
C
175
10
1