RFD10P03L Intersil Corporation, RFD10P03L Datasheet - Page 5

• Manufacturer Part Number: RFD10P03L
• Description: 10A/ 30V/ 0.200 Ohm/ Logic Level/ P-Channel Power MOSFET
• Manufacturer: Intersil Corporation

Typical Performance Curves
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
Test Circuits and Waveforms
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS FOR
VARY t
REQUIRED PEAK I
-22.5
-7.5
0V
V
-30
-15
1.2
1.0
0.8
0.6
0.4
GS
0
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
-80
P
TO OBTAIN
20
t
-40
JUNCTION TEMPERATURE
V
CONSTANT GATE CURRENT
I
I
P
G(REF)
G(ACT)
DD
=BV
AS
T
J
0.75 BV
0.50 BV
0.25 BV
, JUNCTION TEMPERATURE (
DSS
0
I
G(REF)
t, TIME ( s)
V
R
DSS
DSS
DSS
GS
R
L
7-7
= -0.25mA
40
G
= 3.0
= -5V
0.75 BV
0.50 BV
0.25 BV
V
RFD10P03L, RFD10P03LSM, RFP10P03L
80
DD
V
GS
DSS
DSS
DSS
= BV
= V
80
V
Unless Otherwise Specified (Continued)
I
AS
DS
120
DSS
DS
I
I
G(REF)
G(ACT)
o
DUT
, I
C)
0.01
D
L
= -250 A
160
-5.00
-3.75
-2.50
-1.25
0.00
-
+
V
DD
200
FIGURE 15. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
0
1200
1000
FIGURE 13. SWITCHING TIME vs GATE RESISTANCE
150
125
100
800
200
600
400
50
25
75
V
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
0
0
DD
0
0
V
DD
= -15V, I
R
GS
10
V
-5
DS
, GATE TO SOURCE RESISTANCE ( )
I
D
C
AS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
= -10A, R
OSS
RSS
ISS
t
P
20
-10
L
= 1.50
BV
t
AV
DSS
-15
30
V
C
C
C
GS
ISS
RSS
OSS
= 0V, f = 0.1MHz
= C
V
= C
DS
C
-20
GS
40
GD
DS
t
d(OFF)
+ C
t
+ C
d(ON)
t
t
r
f
GD
GD
-25
50