BF1101 Philips Semiconductors, BF1101 Datasheet

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BF1101

Manufacturer Part Number
BF1101
Description
N-channel dual-gate MOS-FETs
Manufacturer
Philips Semiconductors
Datasheet

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BF1101
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NXP
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BF1101
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PH
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BF1101R
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BF1101WR
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BF1101WR
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20 000
Product specification
Supersedes data of 1999 Feb 01
DATA SHEET
BF1101; BF1101R; BF1101WR
N-channel dual-gate MOS-FETs
DISCRETE SEMICONDUCTORS
1999 May 14

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BF1101 Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 1999 May 14 ...

Page 2

... MHz f = 800 MHz input level for AGC CAUTION 2 Product specification handbook, 2 columns Top view MSB035 BF1101R marking code: NCp. Fig.2 Simplified outline (SOT143R fpage 2 1 Top view MSB842 BF1101WR marking code: NC. Fig.3 Simplified outline (SOT343R) ...

Page 3

... P tot (mW) 200 150 100 100 Fig.4 Power derating curve. 1999 May 14 BF1101; BF1101R; BF1101WR CONDITIONS T 110 C; note 1 s PARAMETER MGL615 150 200 Product specification MIN. MAX. UNIT 7 ...

Page 4

... S opt input level for AGC MHz MHz; note 1 w unw input level for AGC MHz MHz; note 1 w unw 4 Product specification BF1101; BF1101R; BF1101WR MIN G1 G2 0.5 S- ...

Page 5

... V handbook, halfpage V G2 3 G1-S ( MGS301 handbook, halfpage 3 2 2.5 V G1-S ( BF1101; BF1101R; BF1101WR (mA) V G1 1 Fig.6 Output characteristics; typical values ...

Page 6

... ( Fig.12 Drain current as a function of gate 2 voltage Product specification BF1101; BF1101R; BF1101WR (mA G2 120 k (connected see Fig.21. ...

Page 7

... V 3 G2-S (V) MGS309 handbook, halfpage gain reduction (dB MHz amb ( 180 Fig.16 Drain current as a function of gain reduction; 7 BF1101; BF1101R; BF1101WR 0 gain (dB) (3) (2) ( MHz ...

Page 8

... mA Product specification BF1101; BF1101R; BF1101WR (MHz amb a function of frequency; typical values (MHz ...

Page 9

... mA G2-S D amb F min (dB) (ratio) 1.5 0.715 9 Product specification BF1101; BF1101R; BF1101WR C3 4 DUT 2 4 MGS315 = 25 C amb S 12 ANGLE MAGNITUDE (ratio) (deg) (ratio) 0.001 87.6 0.990 0.001 86 ...

Page 10

... May scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES JEDEC EIAJ 10 Product specification BF1101; BF1101R; BF1101WR detail 2.5 0.45 0.55 0.2 0.1 2.1 0.15 0.45 EUROPEAN PROJECTION SOT143B 0.1 ISSUE DATE ...

Page 11

... May scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES JEDEC EIAJ 11 Product specification BF1101; BF1101R; BF1101WR detail 2.5 0.55 0.45 0.2 0.1 2.1 0.25 0.25 EUROPEAN PROJECTION SOT143R 0.1 ISSUE DATE 97-03-10 ...

Page 12

... OUTLINE VERSION IEC SOT343R 1999 May scale 0.25 2.2 1.35 1.15 1.3 0.10 1.8 1.15 REFERENCES JEDEC EIAJ 12 BF1101; BF1101R; BF1101WR detail 2.2 0.45 0.23 0.2 0.2 2.0 0.15 0.13 EUROPEAN PROJECTION Product specification SOT343R ...

Page 13

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 May 14 BF1101; BF1101R; BF1101WR 13 Product specification ...

Page 14

... Philips Semiconductors N-channel dual-gate MOS-FETs 1999 May 14 BF1101; BF1101R; BF1101WR NOTES 14 Product specification ...

Page 15

... Philips Semiconductors N-channel dual-gate MOS-FETs 1999 May 14 BF1101; BF1101R; BF1101WR NOTES 15 Product specification ...

Page 16

... Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel ...

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