BF1101 Philips Semiconductors, BF1101 Datasheet - Page 6

• Manufacturer Part Number: BF1101
• Description: N-channel dual-gate MOS-FETs
• Manufacturer: Philips Semiconductors

Philips Semiconductors
1999 May 14
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FETs
V
V
T
Fig.11 Drain current as a function of gate 1 (= V
Fig.9
V
R
j
DS
G2-S
G2-S
(mA)
= 25 C.
(mA)
G1
I D
I D
= 5 V.
connected to V
20
16
12
20
16
12
= 4 V.
= 4 V; T
8
4
0
8
4
0
0
0
and drain supply voltage; typical values.
Drain current as a function of gate 1 current;
typical values.
j
= 25 C.
10
GG
2
R G1 = 47 k
; see Fig.21.
20
4
68 k
30
V GG = V DS (V)
6
40
I G1 ( A)
82 k
MGS303
MGS305
100 k
120 k
150 k
180 k
220 k
50
8
GG
)
6
handbook, halfpage
handbook, halfpage
V
R
Fig.12 Drain current as a function of gate 2 voltage;
V
R
DS
G1
DS
G1
(mA)
(mA)
I D
Fig.10 Drain current as a function of gate 1
= 5 V; T
= 120 k (connected to V
I D
= 5 V; V
= 120 k (connected to V
16
12
15
10
8
4
0
BF1101; BF1101R; BF1101WR
5
0
0
0
typical values.
j
G2-S
= 25 C.
supply voltage (= V
= 4 V; T
1
j
2
= 25 C.
2
GG
GG
); see Fig.21.
); see Fig.21.
3
GG
4
); typical values.
Product specification
V GG = 5 V
V G2-S (V)
4
V GG (V)
4.5 V
4 V
3.5 V
3 V
MGS304
MGS306
6
5