BF1101 Philips Semiconductors, BF1101 Datasheet - Page 7

• Manufacturer Part Number: BF1101
• Description: N-channel dual-gate MOS-FETs
• Manufacturer: Philips Semiconductors

Philips Semiconductors
1999 May 14
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FETs
V
R
Fig.15 Unwanted voltage for 1% cross-modulation
V
(1) R
DS
G1
(dB V)
V unw
DS
( A)
I G1
Fig.13 Gate 1 current as a function of gate 2
= 5 V; T
= 120 k (connected to V
120
110
100
= 5 V; V
40
30
20
10
90
80
G1
0
0
0
= 68 k .
as a function of gain reduction;
typical values; see Fig.21.
j
= 25 C.
GG
voltage; typical values.
= 5 V; f = 50 MHz; f
10
(1)
(2) R
(2)
2
G1
20
= 120 k .
GG
(3)
); see Fig.21.
unw
30
= 60 MHz; T
gain reduction (dB)
4
(3) R
V GG = 5 V
V G2-S (V)
40
G1
amb
= 180 k .
4.5 V
3 V
4 V
3.5 V
MGS307
MGS309
= 25 C.
50
6
7
handbook, halfpage
handbook, halfpage
reduction
Fig.16 Drain current as a function of gain reduction;
V
(1) R
V
(1) R
gain
(dB)
DS
DS
(mA)
I D
Fig.14 Typical gain reduction as a function of
= 5 V; V
= 5 V; V
25
20
15
10
10
20
30
40
50
G1
G1
5
0
BF1101; BF1101R; BF1101WR
0
0
0
= 68 k .
= 68 k .
typical values; see Fig.21.
GG
GG
the AGC voltage; see Fig.21.
= 5 V; f = 50 MHz; T
= 5 V; f = 50 MHz; T
10
(2) R
(2) R
1
(1)
(2)
(3)
G1
G1
20
= 120 k .
= 120 k .
(3)
2
amb
amb
(2)
30
= 25 C.
= 25 C.
gain reduction (dB)
(1)
(3) R
(3) R
Product specification
3
40
V AGC (V)
G1
G1
= 180 k .
= 180 k .
MGS308
MGS310
50
4