BF1101 Philips Semiconductors, BF1101 Datasheet - Page 3

• Manufacturer Part Number: BF1101
• Description: N-channel dual-gate MOS-FETs
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
THERMAL CHARACTERISTICS
1999 May 14
V
I
I
I
P
T
T
R
handbook, halfpage
SYMBOL
SYMBOL
D
G1
G2
stg
j
DS
tot
th j-s
N-channel dual-gate MOS-FETs
(mW)
P tot
s
250
200
150
100
is the temperature of the soldering point of the source lead.
50
0
0
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction to soldering point
Fig.4 Power derating curve.
50
PARAMETER
100
150
T s ( C)
PARAMETER
MGL615
200
T
s
110 C; note 1
3
CONDITIONS
BF1101; BF1101R; BF1101WR
65
MIN.
VALUE
200
7
30
200
+150
+150
Product specification
10
10
MAX.
UNIT
K/W
V
mA
mA
mA
mW
C
C
UNIT