MT29F2G08AACWP Micron, MT29F2G08AACWP Datasheet - Page 12

• Manufacturer Part Number: MT29F2G08AACWP
• Description: NAND Flash Memory; Density: 2Gb; Organization: 256Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 3.3V; Operating Temperature Range: 0° to +70°C; Package: 48-TSOP
• Manufacturer: Micron

Figure 7:
Table 4:
PDF: 09005aef814b01a2 / Source: 09005aef814b01c7
2_4_8gb_nand_m49a__2.fm - Rev. D 12/06 EN
Cycle
First
Second
Third
Fourth
Fifth
Cache Register
Data Register
2,048 blocks
per device
Array Addressing: MT29F2G08AxC
Array Organization for MT29F2G08AxC (x8)
BA15
LOW
LOW
I/O7
CA7
BA7
Notes: 1. If CA11 = “1” then CA[10:6] must be “0.”
2. Block address concatenated with page address = actual page address; CAx = column
BA14
LOW
LOW
I/O6
CA6
BA6
address; PAx = page address; BAx = block address.
2,048
2,048
1 block
BA13
LOW
LOW
I/O5
CA5
PA5
2,112 bytes
BA12
LOW
LOW
I/O4
CA4
PA4
12
2Gb, 4Gb, 8Gb: x8, x16 NAND Flash Memory
64
64
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CA11
BA11
LOW
I/O3
CA3
PA3
64 pages = 1 block
1 page
1 block
1 device = (2K + 64) bytes x 64 pages
1
I/O 7
I/O 0
CA10
BA10
LOW
= (2K + 64) bytes
= (2K + 64) bytes x 64 pages
= (128K + 4K) bytes
= 2,112Mb
I/O2
CA2
PA2
x 2,048 blocks
(128K + 4K) bytes
©2005 Micron Technology, Inc. All rights reserved.
Memory Mapping
LOW
I/O1
CA1
CA9
BA9
PA1
BA16
I/O0
CA0
CA8
BA8
PA0