MT29F2G08AACWP Micron, MT29F2G08AACWP Datasheet - Page 2

• Manufacturer Part Number: MT29F2G08AACWP
• Description: NAND Flash Memory; Density: 2Gb; Organization: 256Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 3.3V; Operating Temperature Range: 0° to +70°C; Package: 48-TSOP
• Manufacturer: Micron

Part Numbering Information
Figure 2:
Valid Part Number Combinations
PDF: 09005aef814b01a2 / Source: 09005aef814b01c7
2_4_8gb_nand_m49a__1.fm - Rev. D 12/06 EN
Micron Technology
Product Family
29F = Single-supply NAND Flash memory
Density
2G = 2Gb
4G = 4Gb
8G = 8Gb
Device Width
08 = 8 bits
16 = 16 bits
Classification
A
B
F
Operating Voltage Range
A = 3.3V (2.70V–3.60V)
B = 1.8V (1.70V–1.95V)
# of die # of CE# # of R/B#
1
2
4
Part Number Chart
1
1
1
1
1
1
Common
Common
Common
Micron
densities (see Figure 2).
After building the part number from the part numbering chart above, verify that the part
number is valid using the Micron Parametric Part Search at
parametric.
If the device required is not on this list, contact the factory.
I/O
MT 29F 2G 08
®
NAND Flash devices are available in several different configurations and
A
A
C
2
2Gb, 4Gb, 8Gb: x8, x16 NAND Flash Memory
WP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
ES
Part Numbering Information
:C
Design Revision
C = First generation
Production Status
Blank = Production
ES = Engineering sample
MS = Mechanical sample
QS = Qualification sample
Operating Temperature Range
Blank = Commercial (0°C to +70°C)
ET = Extended (–40°C to +85°C)
Reserved for Future Use
Flash Performance
Blank = Standard
Package Codes
WP = 48-pin TSOP I (lead-free)
Feature Set
A = First-generation die
B = Second-generation die
C = Third-generation die
www.micron.com/products/
©2005 Micron Technology, Inc. All rights reserved.