MT29F2G08AACWP Micron, MT29F2G08AACWP Datasheet - Page 37

• Manufacturer Part Number: MT29F2G08AACWP
• Description: NAND Flash Memory; Density: 2Gb; Organization: 256Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 3.3V; Operating Temperature Range: 0° to +70°C; Package: 48-TSOP
• Manufacturer: Micron

WRITE PROTECT Operation
Figure 29:
Figure 30:
Figure 31:
PDF: 09005aef814b01a2 / Source: 09005aef814b01c7
2_4_8gb_nand_m49a__2.fm - Rev. D 12/06 EN
ERASE Enable
ERASE Disable
PROGRAM Enable
It is possible to enable and disable PROGRAM and ERASE commands using the WP# pin.
The following figures illustrate the setup time (
PROGRAM or ERASE command is latched into the command register. After command
cycle 1 is latched, WP# must not be toggled until the command is complete and the
device is ready (status register bit 5 is “1”).
WE#
WP#
WE#
WP#
WE#
WP#
R/B#
R/B#
R/B#
I/Ox
I/Ox
I/Ox
t WW
t WW
t WW
60h
60h
80h
37
2Gb, 4Gb, 8Gb: x8, x16 NAND Flash Memory
D0h
D0h
10h
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
WW) required from WP# toggling until a
Command Definitions
©2005 Micron Technology, Inc. All rights reserved.