MT29F2G08AACWP Micron, MT29F2G08AACWP Datasheet - Page 58

• Manufacturer Part Number: MT29F2G08AACWP
• Description: NAND Flash Memory; Density: 2Gb; Organization: 256Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 3.3V; Operating Temperature Range: 0° to +70°C; Package: 48-TSOP
• Manufacturer: Micron

Revision History
Rev. D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12/06
Rev. C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10/06
Rev. B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4/06
Rev. A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3/06
PDF: 09005aef814b01a2 / Source: 09005aef814b01c7
2_4_8gb_nand_m49a__2.fm - Rev. D 12/06 EN
• Table 21 on page 43: Updated 3V x16 and 1.8V
• Removed references to power-on AUTO READ (PRE) feature.
• Updated Web links.
• “Pin Assignments and Descriptions” on page 7: Added heading.
• Table 1 on page 8: Changed table title.
• Table 3 on page 11: In note 2, changed bytes to words.
• “READ ID 90h” on page 24: Revised description.
• Figure 25 on page 33: Revised OTP page.
• Table 16 on page 41: Changed part numbers under standby current (CMOS), input
• “Error Management” on page 38: Revised second bullet.
• Table 21 on page 43: Changed
• Figure 42 on page 48 and Figure 43 on page 49: Added
• Figure 55 on page 57: Updated package diagram with 7/18/06 version.
• Table 21 on page 43: Updated the
• Initial release.
leakage current, and output leakage current to reflect 1.8V.
fined.
and 1.8V devices.
58
2Gb, 4Gb, 8Gb: x8, x16 NAND Flash Memory
t
WB (MAX) from 100ns to 150ns.
t
WHR minimum value from 60ns to 80ns for 3V x16
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
CHZ MAX value to 45ns.
t
WB timings with R/B# unde-
©2005 Micron Technology, Inc. All rights reserved.
Revision History