ATF-10736 Agilent(Hewlett-Packard), ATF-10736 Datasheet - Page 2

• Manufacturer Part Number: ATF-10736
• Description: 0.512 GHz General Purpose Gallium Arsenide FET
• Manufacturer: Agilent(Hewlett-Packard)

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ATF-10736 Absolute Maximum Ratings
Part Number Ordering Information
For more information, see “Tape and Reel Packaging for Semiconductor Devices.”
ATF-10736 Typical Performance, T
ATF-10736 Noise Parameters:
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
V
Thermal Resistance:
Liquid Crystal Measurement:
2.0
1.5
1.0
0.5
DS
Symbol
0
2.0
T
ATF-10736-TR1
ATF-10736-STR
= 2V, I
V
T
V
V
I
Part Number
P
STG
Freq.
DS
GD
CH
DS
GS
GHz
T
1.0
2.0
4.0
6.0
8.0
DS
FREQUENCY (GHz)
NF
4.0
= 25 mA, T
O
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
G
A
6.0
NF
Parameter
A
dB
0.8
0.9
1.2
1.4
1.7
= 25 C.
8.0 10.0 12.0
O
Devices Per Reel
18
15
12
9
6
Mag
0.88
0.75
0.48
0.46
0.53
1000
[4]
10
[2,3]
Figure 2. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
V
DS
30
25
20
15
10
1 m Spot Size
DS
5
0
0.5
jc
= 2 V, I
= 350 C/W; T
= 2 V, I
opt
DataSheet4U.com
A
Units
mW
mA
= 25 C
1.0
V
V
V
C
C
DS
FREQUENCY (GHz)
-122
Ang
159
DS
-71
= 25 mA.
41
85
5-30
|S
= 25 mA
2.0
MSG
21
[5]
|
Reel Size
2
Maximum
CH
-65 to +175
STRIP
Absolute
4.0 6.0 8.0 12.0
= 150 C
7"
I
430
175
+ 5
DSS
-4
-7
R
0.52
0.27
0.08
0.08
0.43
N
/50
MAG
[1]
Notes:
1. Permanent damage may occur if
2. T
3. Derate at 2.9 mW/ C for
4. Storage above +150 C may tarnish
5. The small spot size of this tech-
any of these limits are exceeded.
T
the leads of this package difficult to
solder into a circuit. After a device
has been soldered into a circuit, it
may be safely stored up to 175 C.
nique results in a higher, though
more accurate determination of
than do alternate methods. See
MEASUREMENTS section for
more information.
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
DS
CASE TEMPERATURE
CASE
30
25
20
15
10
5
0
0.5
= 4 V, I
> 25 C.
1.0
DS
FREQUENCY (GHz)
= 70 mA.
|S
2.0
MSG
21
|
2
= 25 C.
4.0 6.0 8.0 12.0
MAG
MSG
jc