NE32584 NEC, NE32584 Datasheet - Page 2

• Manufacturer Part Number: NE32584
• Description: C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
• Manufacturer: NEC

ELECTRICAL CHARACTERISTICS (T
TYPICAL CHARACTERISTICS (T
2
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
CHARACTERISTIC
250
200
150
100
60
40
20
50
–2.0
0
0
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
V
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
50
GS
T
A
- Gate to Source Voltage - V
- Ambient Temperature - ¡C
100
–1.0
SYMBOL
V
150
I
I
GS(off)
NF
GSO
G
DSS
g
m
a
A
= 25 q q q q C)
V
200
DS
A
MIN.
ð0.2
11.0
= 2 V
20
45
= 25 q q q q C)
250
0
TYP.
ð0.7
0.45
12.5
0.5
60
60
MAX.
ð2.0
0.55
10
90
100
24
20
16
12
80
60
40
20
8
0
0
1
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
UNIT
mA
mS
P A
dB
dB
V
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DS
2
|S
- Drain to Source Voltage - V
V
V
V
V
V
21s
GS
DS
DS
DS
DS
f - Frequency - GHz
|
2
= 2 V, V
= 2 V, I
= 2 V, I
= 2 V, I
= ð3 V
3
1.5
TEST CONDITIONS
MSG.
6
D
D
D
GS
= 100 P A
= 10 mA
= 10 mA, f = 12 GHz
8
= 0 V
10
V
I
D
14
DS
V
= 10 mA
GS
MAG.
= 2 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
20
= 0 V
NE32584C
3.0
30