NE68100 NEC, NE68100 Datasheet - Page 14

• Manufacturer Part Number: NE68100
• Description: NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
• Manufacturer: NEC

BJT NONLINEAR MODEL PARAMETERS
SCHEMATIC
(1) Gummel-Poon Model
Note:
This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.
NE68130 NONLINEAR MODEL
Parameters
RBM
VAR
MJE
VAF
CJE
VJE
CJC
VJC
IKF
ISE
IKR
ISC
IRB
NE
BR
NR
RE
RB
BF
NF
NC
RC
IS
1.77e-11
2.7e-16
1.2e-12
0.8e-12
Infinity
Infinity
1.2e-5
0.055
1.02
0.77
0.27
185
2.1
0.6
3.7
0.5
Q1
15
12
1
1
0
8
2
Parameters
XCJC
MJC
CJS
MJS
XTF
VTF
PTF
XTB
VJS
ITF
EG
XTI
FC
TR
KF
TF
AF
Base
C
BEPKG
L
14e-12
0.3e-9
BX
0.56
0.75
1.11
Q1
0.5
0.1
25
0
0
0
3
0
0
3
0
1
L
B
(1)
C
C
CBPKG
CB
Emitter
L
L
E
EX
C
CE
Q1
C
CEPKG
ADDITIONAL PARAMETERS
MODEL RANGE
Frequency:
Bias:
Date:
UNITS
L
CX
Parameters
time
capacitance
inductance
resistance
voltage
current
Parameter
C
C
L
L
C
C
C
L
L
L
Collector
B
E
BX
CX
EX
CB
CE
CBPKG
CEPKG
BEPKG
0.05 to 3.0 GHz
V
10/11/96
CE
= 2.5 V to 8 V, I
NE681 SERIES
seconds
farads
henries
ohms
volts
amps
Units
0.07e-12
0.01e-12
0.12e-12
0.16e-12
0.04e-12
0.52e-9
1.18e-9
C
68130
0.2e-9
0.8e-9
0.2e-9
= 0.3 mA to 10 mA