NE68100 NEC, NE68100 Datasheet - Page 17
NE68100
Manufacturer Part Number
NE68100
Description
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
Manufacturer
NEC
Datasheet
1.NE68100.pdf
(20 pages)
BJT NONLINEAR MODEL PARAMETERS
NE681 SERIES
NE68139 NONLINEAR MODEL
SCHEMATIC
(1) Gummel-Poon Model
Parameters
RBM
VAF
VAR
CJE
MJE
CJC
VJE
IKF
ISE
ISC
IRB
VJC
NR
NC
RC
BF
BR
IKR
RE
RB
NF
NE
IS
1.77e-11
2.7e-16
1.2e-12
0.8e-12
Infinity
Infinity
1.2e-5
185.0
0.055
1.02
15.0
12.0
0.77
0.50
0.27
Q1
2.1
1.0
1.0
0.6
3.7
8.0
2.0
0
Parameters
Base
XCJC
MJC
MJS
XTB
CJS
VJS
PTF
XTF
VTF
FC
EG
XTI
TF
ITF
KF
TR
AF
L
BX
14.0e-12
C
0.3e-9
L
0.750
0.56
0.50
25.0
BEPKG
1.11
B
3.0
0.1
3.0
1.0
Q1
0
0
0
0
0
0
(1)
C
C
CBPKG
CB
Emitter
L
L
E
EX
C
UNITS
ADDITIONAL PARAMETERS
MODEL RANGE
Frequency:
Bias:
Date:
CE
L
C
Parameter
time
capacitance
inductance
resistance
voltage
current
C
Parameters
C
C
L
L
L
C
C
C
L
L
L
L
CEPKG
B
C
E
BX
CX
EX
CX
CB
CE
CBPKG
CEPKG
BEPKG
0.1 to 3.0 GHz
V
6/17/96
CE
Q1
= 2.5 V to 8.0 V, I
Collector
C
= 0.3 mA to 7 mA
0.07e-12
0.01e-12
0.88e-9
0.79e-9
0.7e-9
0.165e-12
0.165e-12
0.01e-12
0.39e-9
0.39e-9
0.2e-9
68139
seconds
farads
henries
ohms
volts
amps
Units