BFG197 Philips Semiconductors, BFG197 Datasheet - Page 2

• Manufacturer Part Number: BFG197
• Description: NPN 7 GHz wideband transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
DESCRIPTION
The BFG197 is a silicon NPN
transistor in a 4-pin, dual-emitter
plastic SOT143 envelope. It is
primarily intended for wideband
applications in the GHz range, such
as satellite TV systems and repeater
amplifiers in fibre-optic systems.
QUICK REFERENCE DATA
Note
1. T
1995 Sep 13
V
V
I
P
C
f
G
F
C
T
SYMBOL
High power gain
Low noise figure
Gold metallization ensures
excellent reliability.
CBO
CEO
tot
re
NPN 7 GHz wideband transistor
UM
S
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
collector current
total power dissipation
feedback capacitance
transition frequency
maximum unilateral
power gain
noise figure
PARAMETER
PINNING
BFG197 (Fig.1) Code: V5
BFG197/X (Fig.1) Code: V13
BFG197A/XR (Fig.2) Code: V35
open emitter
open base
DC value
up to T
I
I
I
T
I
T
T
C
C
C
C
PIN
s
amb
amb
amb
1
2
3
4
1
2
3
4
1
2
3
4
= i
= 50 mA; V
= 50 mA; V
= 50 mA; V
=
c
= 25 C; f = 1 GHz
= 25 C; f = 2 GHz
= 25 C; f = 1 GHz
opt
= 0; V
s
collector
base
emitter
emitter
collector
emitter
base
emitter
collector
emitter
base
emitter
= 75 C; note 1
; I
C
= 15 mA; V
CONDITIONS
CB
CE
CE
CE
DESCRIPTION
= 8 V; f = 1 MHz
= 4 V; f = 2 GHz
= 6 V;
= 6 V;
2
CE
= 8 V;
handbook, 2 columns
handbook, 2 columns
MIN.
BFG197; BFG197/X;
Top view
1
Fig.2 SOT143XR.
4
3
2
Top view
0.85
7.5
16
10
1.7
Fig.1 SOT143.
TYP.
Product specification
BFG197/XR
20
10
100
350
MAX.
MSB014
MSB035
3
2
4
1
V
V
mA
mW
pF
GHz
dB
dB
dB
UNIT