BFG197 Philips Semiconductors, BFG197 Datasheet - Page 5

• Manufacturer Part Number: BFG197
• Description: NPN 7 GHz wideband transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
1995 Sep 13
handbook, halfpage
handbook, halfpage
NPN 7 GHz wideband transistor
gain
(dB)
V
V
CE
CE
gain
(dB)
= 4 V; f = 1 GHz.
Fig.7 Gain as a function of collector current.
= 6 V; I
20
15
10
50
40
30
20
10
5
0
0
0
Fig.9 Gain as a function of frequency.
10
MSG
C
= 50 mA.
MSG
20
G max
10
G UM
G UM
2
40
G max
10
3
60
f (MHz)
I
C
(mA)
MCD157
MCD159
80
10
4
5
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
V
V
CE
CE
= 4 V; I
= 8 V; I
50
40
30
20
10
50
40
30
20
10
0
0
10
10
Fig.10 Gain as a function of frequency.
Fig.8 Gain as a function of frequency.
C
C
= 50 mA.
= 30 mA.
MSG
MSG
10
10
G UM
G UM
2
2
BFG197; BFG197/X;
G max
10
10
G max
3
3
Product specification
BFG197/XR
f (MHz)
f (MHz)
MCD158
MCD160
10
10
4
4