BFG197 Philips Semiconductors, BFG197 Datasheet - Page 3

• Manufacturer Part Number: BFG197
• Description: NPN 7 GHz wideband transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. T
CHARACTERISTICS
T
Note
1. G
1995 Sep 13
V
V
V
I
P
T
T
R
I
h
C
C
C
f
G
F
d
SYMBOL
SYMBOL
SYMBOL
C
j
CBO
T
FE
2
stg
j
CBO
CEO
EBO
tot
th j-s
= 25 C unless otherwise specified.
c
e
re
NPN 7 GHz wideband transistor
UM
S
UM
is the temperature at the soldering point of the collector tab.
is the maximum unilateral power gain, assuming S
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature range
junction operating temperature
from junction to soldering point; note 1
collector leakage current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
noise figure
second order intermodulation
distortion
PARAMETER
PARAMETER
PARAMETER
open emitter
open base
open collector
DC value, continuous
up to T
I
T
I
T
T
T
V
I
I
I
I
I
I
E
C
E
C
C
C
C
C
amb
amb
s
amb
s
amb
CE
= 0; V
= i
= 50 mA; V
= i
= i
= 50 mA; V
= 50 mA; V
= 50 mA; V
=
=
= 6 V;V
e
c
c
= 25 C; f = 1 GHz
= 25 C; f = 2 GHz
= 25 C; f = 1 GHz
= 25 C; f = 2 GHz
opt
opt
= 0; V
= 0; V
= 0; V
s
CB
= 75 C; note 1
; I
; I
CONDITIONS
C
C
3
= 5 V
12
o
= 15 mA; V
= 50 mA; V
CB
EB
CB
= 50 dBmV;
CE
CE
CE
CE
is zero and
CONDITIONS
= 0.5 V; f = 1 MHz
= 8 V; f = 1 MHz
= 8 V; f = 1 MHz
= 5 V
= 4 V; f = 2 GHz
= 6 V;
= 6 V;
CE
CE
G
= 8 V;
= 6 V;
UM
=
10
40
BFG197; BFG197/X;
log
MIN.
------------------------------------------------------------ dB.
1
–
110
1.5
3.3
0.85
7.5
16
10
1.7
2.3
s
MIN.
TYP.
65
51
VALUE
11
290
Product specification
BFG197/XR
2
s
21
1
2
20
10
2.5
100
350
+150
175
100
MAX.
MAX.
–
s
22
UNIT
2
K/W
V
V
V
mA
mW
nA
pF
pF
pF
GHz
dB
dB
dB
dB
dB
UNIT
C
C
UNIT