BFG197 Philips Semiconductors, BFG197 Datasheet - Page 6
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BFG197
Manufacturer Part Number
BFG197
Description
NPN 7 GHz wideband transistor
Manufacturer
Philips Semiconductors
Datasheet
1.BFG197.pdf
(13 pages)
Philips Semiconductors
1995 Sep 13
handbook, halfpage
handbook, halfpage
NPN 7 GHz wideband transistor
d im
(dB)
V
(dB)
CE
V
F
Fig.13 Intermodulation distortion, typical values.
CE
Fig.11 Minimum noise figure as a function of
= 6 V.
45
50
55
60
65
70
= 8 V ; V
4
3
2
1
0
20
1
collector current.
o
= 700 mV; f
40
60
(p+q r)
10
= 793.25 MHz; T
80
I
C
(mA)
100
f = 2 GHz
500 MHz
amb
I
C
1 GHz
MBB266
MCD161
(mA)
= 25 C.
100
120
6
handbook, halfpage
handbook, halfpage
(dB)
V
d 2
CE
(dB)
V
Fig.14 Second order intermodulation distortion,
CE
F
Fig.12 Minimum noise figure as a function of
= 6 V.
35
40
45
50
55
60
= 8 V; V
4
3
2
1
0
10
20
20 mA
I
10 mA
2
C
= 50 mA
typical values.
frequency.
o
= 50 mV; f
40
(p+q r)
BFG197; BFG197/X;
60
= 810 MHz; T
10
3
80
f (MHz)
Product specification
BFG197/XR
amb
100
= 25 C.
I
C
MCD162
MBB268
(mA)
10
120
4