BFG19S Siemens Semiconductor Group, BFG19S Datasheet

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BFG19S

Manufacturer Part Number
BFG19S
Description
NPN Silicon RF Transistor (For low noise/ low distortion broadband amplifiers in antenna)
Manufacturer
Siemens Semiconductor Group
Datasheet
1.BFG19S.pdf (6 pages)

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NPN Silicon RF Transistor
ESD: Electrostatic discharge sensitive device, observe handling precaution!
1) T
• For low noise, low distortion broadband
• CECC-type available: CECC 50 002/259
Type
BFG 19S
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
Semiconductor Group
amplifiers in antenna and
telecommunications systems up to 1.5GHz
at collector currents from 10 mA to 70 mA
S
S
is measured on the collector lead at the soldering point to the pcb.
75 °C
Marking Ordering Code
BFG19S Q62702-F1359
1)
1
Symbol
V
V
V
V
I
I
P
T
T
T
R
C
B
j
A
stg
CEO
CES
CBO
EBO
tot
thJS
Pin Configuration
1 = E
2 = B
3 = E
- 65 ... + 150
- 65 ... + 150
Values
100
150
15
20
20
12
3
1
75
4 = C
Package
SOT-223
BFG 19S
Dec-13-1996
Unit
V
mA
W
°C
K/W

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BFG19S Summary of contents

Page 1

... CECC-type available: CECC 50 002/259 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code BFG 19S BFG19S Q62702-F1359 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics Transition frequency mA 500 MHz C CE Collector-base capacitance MHz CB Collector-emitter capacitance ...

Page 4

Total power dissipation P * Package mounted on epoxy 1200 mW 1000 P tot 900 800 700 600 500 T A 400 300 200 100 Permissible Pulse Load thJS K/W ...

Page 5

Collector-base capacitance 1MHz BE be 2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Power Gain ...

Page 6

Power Gain Parameter 14 I =70mA Power ...

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