BFG19S Siemens Semiconductor Group, BFG19S Datasheet - Page 3

• Manufacturer Part Number: BFG19S
• Description: NPN Silicon RF Transistor (For low noise/ low distortion broadband amplifiers in antenna)
• Manufacturer: Siemens Semiconductor Group

2) G
Electrical Characteristics at T
Parameter
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
Collector-emitter capacitance
V
Emitter-base capacitance
V
Noise figure
I
f = 900 MHz
f = 1.8 GHz
Power gain
I
Z
f = 900 MHz
f = 1.8 GHz
Transducer gain
I
f = 900 MHz
f = 1.8 GHz
Third order intercept point
I
Z
Semiconductor Group
C
C
C
C
C
L
S
CB
CE
EB
= 70 mA, V
= 20 mA, V
= 70 mA, V
= 30 mA, V
= 70 mA, V
= Z
= Z
ma
= 0.5 V, f = 1 MHz
= 10 V, f = 1 MHz
= 10 V, f = 1 MHz
L
Lopt
= 50
= | S
21
/ S
CE
CE
2)
CE
CE
CE
12
= 8 V, f = 500 MHz
= 8 V, Z
= 8 V, Z
= 8 V, Z
= 8 V, f = 900 MHz
| (k-(k
2
-1)
S
S
S
= Z
= Z
= Z
1/2
L
)
Sopt
Sopt
= 50
A
= 25°C, unless otherwise specified.
3
Symbol
f
C
C
C
F
G
| S
IP
T
cb
ce
eb
ma
21e
3
|
2
min.
-
-
-
-
-
-
-
-
-
-
4
Values
typ.
5.5
0.85
0.4
4.6
2.5
4
13.5
8
11
5
35
max.
-
-
-
-
-
-
-
-
-
-
1.4
BFG 19S
Dec-13-1996
Unit
GHz
pF
dB
dBm