BFG19S Siemens Semiconductor Group, BFG19S Datasheet - Page 5

• Manufacturer Part Number: BFG19S
• Description: NPN Silicon RF Transistor (For low noise/ low distortion broadband amplifiers in antenna)
• Manufacturer: Siemens Semiconductor Group

Collector-base capacitance C
V
Power Gain G
f = 0.9GHz
V
Semiconductor Group
C
G
CE
BE
cb
= Parameter
= v
2.6
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
dB
pF
14
10
8
6
4
2
0
0
be
= 0, f = 1MHz
20
4
ma
, G
40
8
ms
= f ( I
60
12
C
)
80
cb
16
10V
= f ( V
mA
V
0.7V
V
5V
3V
2V
1V
I
C
R
CB
120
22
)
5
Transition frequency f
V
Power Gain G
f = 1.8GHz
V
G
f
T
CE
CE
= Parameter
= Parameter
GHz
6.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
dB
10
-2
6
4
2
0
0
0
20
20
ma
, G
40
40
ms
= f ( I
T
60
60
= f ( I
C
)
80
80
C
)
10V
BFG 19S
Dec-13-1996
mA
mA
0.7V
I
5V
3V
2V
1V
I
C
C
0.7V
5V
3V
2V
1V
120
120