BFG19S Siemens Semiconductor Group, BFG19S Datasheet - Page 6

• Manufacturer Part Number: BFG19S
• Description: NPN Silicon RF Transistor (For low noise/ low distortion broadband amplifiers in antenna)
• Manufacturer: Siemens Semiconductor Group

Power Gain G
f = Parameter
Power Gain G
V
Semiconductor Group
G
G
CE
= Parameter
dB
dB
14
10
36
28
24
20
16
12
8
6
4
2
0
8
4
0
0.0
0
I
C
=70mA
I
C
=70mA
0.5
2
ma
ma
1.0
, G
| S
, G
4
21
ms
1.5
ms
|
2
= f ( V
= f ( V
6
= f ( f )
2.0
CE
CE
8
):_____
):---------
2.5
GHz
V
0.9GHz
0.9GHz
1.8GHz
1.8GHz
V
f
0.7V
10V
2V
1V
CE
3.5
12
6
Intermodulation Intercept Point IP
(3rd order, Output, Z
V
Power Gain | S
V
IP
S
CE
CE
21
3
= Parameter, f = 900MHz
= Parameter
dBm
dB
40
30
25
20
15
10
32
24
20
16
12
-4
-8
8
4
0
0.0
0
I
C
=70mA
0.5
20
21
1.0
|
2
40
= f ( f )
S
= Z
1.5
L
=50 )
60
1V
2.0
80
2.5
2V
BFG 19S
Dec-13-1996
mA
GHz
3
8V
5V
3V
I
f
0.7V
10V
= f ( I
C
2V
1V
120
3.5
C
)