NE856 NEC, NE856 Datasheet - Page 3

• Manufacturer Part Number: NE856
• Description: NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
• Manufacturer: NEC

TYPICAL PERFORMANCE CURVES
ABSOLUTE MAXIMUM RATINGS
Notes:
1. Operation in excess of any one of these parameters may result
in
2. Maximum T
SYMBOLS
V
V
V
T
CBO
CEO
T
EBO
I
STG
C
J
300
200
100
400
5.0
0.7
0.5
0.2
3.0
2.0
1.0
0.3
0.1
0
permanent damage.
0
1
Collector to Emitter Voltage
J
Collector to Base Voltage
TOTAL POWER DISSIPATION vs.
NE85633
Collector to Base Voltage, V
Emitter to Base Voltage
for the NE85600 and NE85635 is 200°C.
CAPACITANCE vs. COLLECTOR
Junction Temperature
Storage Temperature
Ambient Temperature, T
Collector Current
AMBIENT TEMPERATURE
PARAMETERS
2
NE85633 AND NE85635
COLLECTOR TO BASE
50
TO BASE VOLTAGE
3
NE85635
5
100
7
10
NE85635
NE85634
150
A
20
UNITS
CB
(°C)
NE85632/
mA
°C
°C
V
V
V
(V)
30
33
200
1
50
(T
-65 to +150
RATINGS
A
150
(T
= 25°C)
100
3.0
20
12
A
2
= 25°C)
500
300
200
100
2.4
2.0
1.2
0.8
50
10
1.6
0.4
70
30
20
0
1
0
3.8
NE85632
Free Air
NE85634
Free Air
Aluminum
Heat Sink
for NE85632
V
CE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Ambient Temperature, T
= 10 V
FORWARD CURRENT GAIN
vs. COLLECTOR CURRENT
2
NE85632 AND NE85634
Collector Current, I
3
7.8
10
50
NE85632
with Heat
5
NE85634
Ceramic Substrate
2.5 cm X 0.7 mm
R
TH (J-A)
Sink
7
2
10
= 62.5˚C/W
100
C
(mA)
A
20
(°C)
30
150
50