NE856 NEC, NE856 Datasheet - Page 4

• Manufacturer Part Number: NE856
• Description: NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
• Manufacturer: NEC

TYPICAL PERFORMANCE CURVES
10
16
14
12
10
10
25
20
15
7
3
5
2
1
8
4
6
5
0
1
1
0.1
V
f = 1 GHz
AND MAXIMUM AVAILABLE GAIN
V
CE
CE
GAIN BANDWIDTH PRODUCT
FORWARD INSERTION GAIN
vs. COLLECTOR CURRENT
= 10 V
2
= 10 V
2
Collector Current, I
COLLECTOR CURRENT
Collector Current, I
0.2
INSERTION GAIN vs.
3
3
vs. FREQUENCY
Frequency, f (GHz)
5
5
0.3
NE85634
7
7 10
10
|S
0.5
21E
|
2
20 30
C
20 30
0.7
C
(mA)
(mA)
MAG
NE85632
NE85634
NE85633
V
I
NE85633
NE85635
NE85632
NE85634
C
1.0
CE
= 20 mA
= 10 V
50 70 100
50 70 100
2.0
(T
A
= 25 °C)
-80
-40
-70
-60
-50
-30
24
12
10
20
16
25
20
15
-5
5
8
0
4
0
0.1
1
20
AND MAXIMUM AVAILABLE GAIN
INTERMODULATION DISTORTION
V
CE
FORWARD INSERTION GAIN
0.2 0.3
vs. COLLECTOR CURRENT
= 10 V
2
COLLECTOR CURRENT
Collector Current, I
30
NE85632 AND NE85634
Collector Current, I
INSERTION GAIN vs.
Frequency, f (GHz)
vs. FREQUENCY
V
V
R
IM
IM
CE
O
G
0.5
2
3
5
= 100 dB V/50
= R
= 10 V
f = 90 + 100 MHz
f = 2
NE85635
NE85635
40
L
= 50
X
10
200-190 MHz
1
|S
50
21E
20
2
f = 2 GHz
|
C
f = 500 MHz
f = 1 GHz
2
C
(mA)
V
I
C
(mA)
CE
= 20 mA
MAG
60
= 10 V
50
IM
IM
5
3
2
100
70
10