BFU710F NXP Semiconductors, BFU710F Datasheet - Page 6

• Manufacturer Part Number: BFU710F
• Description: NPN wideband silicon germanium RF transistor
• Manufacturer: NXP Semiconductors

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NXP Semiconductors
BFU710F
Product data sheet
Fig 4.
Fig 6.
C
(fF)
CBS
(1) f = 1.5 GHz
(2) f = 1.8 GHz
(3) f = 2.4 GHz
(4) f = 5.8 GHz
(5) f = 12 GHz
40
30
20
10
0
0
f = 1 MHz, T
collector-base voltage; typical values
V
Gain as a function of collector current; typical value
Collector-base capacitance as a function of
CE
= 2 V; T
1
amb
amb
= 25 °C.
= 25 °C.
2
3
(dB)
G
35
25
15
5
0
All information provided in this document is subject to legal disclaimers.
4
001aam845
V
CB
(V)
5
Rev. 1 — 20 April 2011
5
G
MSG
p(max)
Fig 5.
(GHz)
NPN wideband silicon germanium RF transistor
10
fT
50
40
30
20
10
0
0
I
V
Transition frequency as a function of collector
current; typical values
C
CE
001aam847
(mA)
= 2 V; f = 2 GHz; T
(1)
(2)
(3)
(4)
(5)
15
5
amb
= 25 °C.
10
BFU710F
I
© NXP B.V. 2011. All rights reserved.
C
001aam846
(mA)
15
6 of 12
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