BFU710F NXP Semiconductors, BFU710F Datasheet - Page 5

• Manufacturer Part Number: BFU710F
• Description: NPN wideband silicon germanium RF transistor
• Manufacturer: NXP Semiconductors

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NXP Semiconductors
Table 7.
T
[1]
BFU710F
Product data sheet
Symbol
P
IP3
j
Fig 2.
L(1dB)
= 25
G
(mA)
p(max)
I
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
C
°
10
C unless otherwise specified
8
6
4
2
0
0
T
collector-emitter voltage; typical values
Collector current as a function of
B
B
B
B
B
B
B
is the maximum power gain, if K > 1. If K < 1 then G
Parameter
output power at 1 dB gain compression
third-order intercept point
amb
Characteristics
= 35 μA
= 30 μA
= 25 μA
= 20 μA
= 15 μA
= 10 μA
= 5 μA
= 25 °C.
1
…continued
2
(1)
(2)
(3)
(4)
(5)
(6)
(7)
V
All information provided in this document is subject to legal disclaimers.
CE
001aam843
(V)
3
Rev. 1 — 20 April 2011
Conditions
I
Z
I
Z
C
C
S
S
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
p(max)
= 5 mA; V
= 10 mA; V
= Z
= Z
L
L
= MSG.
= 50 Ω; T
= 50 Ω; T
Fig 3.
NPN wideband silicon germanium RF transistor
CE
h
FE
CE
500
400
300
200
100
= 2.5 V;
0
= 1.5 V;
amb
amb
0
V
DC current gain as a function of collector
current; typical values
CE
= 25 °C
= 25 °C
= 2 V; T
2
amb
= 25 °C.
4
6
Min Typ
-
-
-
-
-
-
-
-
BFU710F
5.5
5
5.5
4.5
18
18
18
19.5
© NXP B.V. 2011. All rights reserved.
8
001aam844
I
C
(mA)
Max Unit
-
-
-
-
-
-
-
-
10
5 of 12
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Datasheet pdf - http://www.DataSheet4U.net/