BFU760F NXP Semiconductors, BFU760F Datasheet - Page 4

• Manufacturer Part Number: BFU760F
• Description: wideband silicon germanium RF transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
Table 7.
T
BFU760F
Product data sheet
Symbol
V
V
I
I
h
C
C
C
f
G
|s
NF
G
P
C
CBO
T
j
www.DataSheet4U.net
FE
(BR)CBO
(BR)CEO
21
L(1dB)
CES
EBS
CBS
p(max)
ass
= 25
|
2
°
C unless otherwise specified
Parameter
collector-base breakdown voltage
collector-emitter breakdown voltage
collector current
collector-base cut-off current
DC current gain
collector-emitter capacitance
emitter-base capacitance
collector-base capacitance
transition frequency
maximum power gain
insertion power gain
noise figure
associated gain
output power at 1 dB gain compression
Characteristics
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 29 April 2011
Conditions
I
I
I
I
V
V
V
I
T
I
I
I
T
I
T
I
Z
C
C
E
C
C
C
C
C
C
C
amb
amb
amb
S
CB
EB
CB
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
= 0 mA; V
= 2.5 μA; I
= 1 mA; I
= 10 mA; V
= 50 mA; V
= 50 mA; V
= 50 mA; V
= 12 mA; V
= 12 mA; V
= 30 mA; V
= Z
= 2 V; f = 1 MHz
= 0.5 V; f = 1 MHz
= 2 V; f = 1 MHz
= 25 °C
= 25 °C
= 25 °C
L
= 50 Ω; T
B
CB
E
NPN wideband silicon germanium RF transistor
= 0 mA
CE
CE
CE
CE
CE
CE
CE
= 0 mA
= 4.5 V
= 2 V
= 1 V; f = 2 GHz;
= 1 V; T
= 1 V; T
= 2 V; Γ
= 2 V; Γ
= 2.5 V;
amb
= 25 °C
amb
amb
S
S
= Γ
= Γ
= 25 °C
= 25 °C
opt
opt
;
;
[1]
Min Typ
10
2.8
-
-
155 330
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BFU760F
© NXP B.V. 2011. All rights reserved.
-
-
25
-
292
1054
175
45
25.5
24
22
13.5
22
20.5
18
10.5
0.40
0.45
0.50
0.75
23
21.5
19.5
12.5
18
18
17
18.5
Max Unit
-
-
70
100
505
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4 of 12
V
V
mA
nA
fF
fF
fF
GHz
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm