BFU760F NXP Semiconductors, BFU760F Datasheet - Page 5

• Manufacturer Part Number: BFU760F
• Description: wideband silicon germanium RF transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 7.
T
[1]
BFU760F
Product data sheet
Symbol
IP3
j
Fig 2.
www.DataSheet4U.net
= 25
G
(mA)
p(max)
I
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
(8) I
(9) I
C
°
60
40
20
C unless otherwise specified
0
0
T
collector-emitter voltage; typical values
Collector current as a function of
B
B
B
B
B
B
B
B
B
is the maximum power gain, if K > 1. If K < 1 then G
Parameter
third-order intercept point
amb
Characteristics
= 180 μA
= 160 μA
= 140 μA
= 120 μA
= 100 μA
= 80 μA
= 60 μA
= 40 μA
= 20 μA
= 25 °C.
1
…continued
2
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
V
All information provided in this document is subject to legal disclaimers.
CE
001aam863
(V)
3
Rev. 1 — 29 April 2011
Conditions
I
Z
C
S
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
= 30 mA; V
p(max)
= Z
L
= 50 Ω; T
= MSG.
Fig 3.
NPN wideband silicon germanium RF transistor
h
CE
FE
500
400
300
200
100
0
= 2.5 V;
amb
0
V
DC current gain as a function of collector
current; typical values
CE
= 25 °C
= 2 V; T
amb
20
= 25 °C.
Min Typ
-
-
-
-
40
BFU760F
I
© NXP B.V. 2011. All rights reserved.
32
32
32
33
C
001aam864
(mA)
Max Unit
-
-
-
-
60
5 of 12
dBm
dBm
dBm
dBm