BFU760F NXP Semiconductors, BFU760F Datasheet - Page 7

• Manufacturer Part Number: BFU760F
• Description: wideband silicon germanium RF transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BFU760F
Product data sheet
Fig 7.
Fig 9.
www.DataSheet4U.net
NF
(dB)
(dB)
G
(1) f = 5.8 GHz
(2) f = 2.4 GHz
(3) f = 1.8 GHz
(1) f = 1.5 GHz
min
1.2
0.8
0.4
40
30
20
10
0
0
0
V
0
V
Minimum noise figure as a function of
collector current; typical values
Gain as a function of frequency; typical values
CE
CE
= 1 V; I
= 2 V; T
(1)
(2)
(3)
(4)
IS21I
2
MSG
2
C
amb
= 8 mA; T
10
= 25 °C.
4
amb
G
6
= 25 °C.
p(max)
20
I
C
All information provided in this document is subject to legal disclaimers.
8
001aam868
001aam870
(mA)
f (GHz)
10
30
Rev. 1 — 29 April 2011
Fig 8.
Fig 10. Minimum noise figure as a function of
NF
(dB)
(dB)
NPN wideband silicon germanium RF transistor
G
min
1.0
0.8
0.6
0.4
0.2
40
30
20
10
0
0
0
0
V
Gain as a function of frequency; typical values
I
frequency; typical values
C
CE
= 12 mA; V
= 1 V; I
MSG
IS21I
2
2
C
= 50 mA; T
2
CE
= 2 V; T
4
4
G
p(max)
amb
amb
6
6
= 25 °C.
= 25 °C.
BFU760F
© NXP B.V. 2011. All rights reserved.
8
8
001aam869
001aam871
f (GHz)
f (GHz)
10
10
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