CA3127 Intersil, CA3127 Datasheet

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CA3127

Manufacturer Part Number
CA3127
Description
High Frequency NPN Transistor Array
Manufacturer
Intersil
Datasheet

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August 1996
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Features
• Gain Bandwidth Product (f
• Power Gain . . . . . . . . . . . . . . . . . 30dB (Typ) at 100MHz
• Noise Figure . . . . . . . . . . . . . . . . 3.5dB (Typ) at 100MHz
• Five Independent Transistors on a Common Substrate
Applications
• VHF Amplifiers
• Multifunction Combinations - RF/Mixer/Oscillator
• Sense Amplifiers
• Synchronous Detectors
• VHF Mixers
• IF Converter
• IF Amplifiers
• Synthesizers
• Cascade Amplifiers
Pinout
T
). . . . . . . . . . . . . . . . >1GHz
SUBSTRATE
1
2
3
4
5
6
7
8
Q
Q
2
3
(PDIP, SOIC)
TOP VIEW
Q
CA3127
1
5-1
Description
The CA3127 consists of five general purpose silicon NPN
transistors on a common monolithic substrate. Each of the
completely isolated transistors exhibits low 1/f noise and a
value of f
from DC to 500MHz. Access is provided to each of the termi-
nals for the individual transistors and a separate substrate
connection has been provided for maximum application flexi-
bility. The monolithic construction of the CA3127 provides
close electrical and thermal matching of the five transistors.
Ordering Information
High Frequency NPN Transistor Array
CA3127E
CA3127M
(3127)
CA3127M96
(3127)
NUMBER
(BRAND)
PART
Q
Q
5
4
16
15
14
13
12
11
10
9
T
in excess of 1GHz, making the CA3127 useful
RANGE (
-55 to 125
-55 to 125
-55 to 125
TEMP.
o
C)
CA3127
16 Ld PDIP
16 Ld SOIC
16 Ld SOIC Tape and Reel M16.15
PACKAGE
File Number
E16.3
M16.15
PKG.
NO.
662.3

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CA3127 Summary of contents

Page 1

... CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 High Frequency NPN Transistor Array Description The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a value from DC to 500MHz ...

Page 2

... NOTES: 1. The collector of each transistor of the CA3127 is isolated from the substrate by an integral diode. The substrate (Terminal 5) must be con- nected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. ...

Page 3

... Z144 25k 1000 FIGURE 2. 100MHz POWER-GAIN AND NOISE-FIGURE TEST CIRCUIT GENERAL RADIO 1021-P1 100MHz GENERATOR VHF NOISE SOURCE HEWLETT PACKARD HP343A FIGURE 3. BLOCK DIAGRAMS OF POWER-GAIN AND NOISE-FIGURE TEST SET-UPS CA3127 V+ 10k 470 BIAS-CURRENT pF R ADJ 0.01 F ...

Page 4

... FIGURE 6. GAIN-BANDWIDTH PRODUCT vs COLLECTOR CURRENT 1MHz 2.25 2.00 1. 1.50 1.25 1.00 0. 0. BIAS VOLTAGE (V) FIGURE 8A. CAPACITANCE vs BIAS VOLTAGE FOR Q CA3127 CA3127 10Hz SOURCE f = 100Hz 1kHz f = 10kHz 10 0 1.0 0.01 FIGURE 5. NOISE FIGURE vs COLLECTOR CURRENT 1.0 0.9 0.8 0.7 0.6 0.5 0 0.1 FIGURE 7 ...

Page 5

... COLLECTOR CURRENT (mA) FIGURE 13. INPUT ADMITTANCE ( COLLECTOR 11 CURRENT CA3127 (Continued FOR TEST CIRCUIT SEE FIGURE 19 -10 100 1000 1 FIGURE 10. VOLTAGE GAIN vs FREQUENCY ...

Page 6

... CURRENT 1mA 100 150 200 FREQUENCY (MHz) FIGURE 17. FORWARD TRANSADMITTANCE (Y FREQUENCY 0.6 0.5 0.4 0.3 0.2 0.1 FIGURE 19. REVERSE TRANSADMITTANCE (Y CA3127 CA3127 (Continued 100 f = 200MHz 2.8 80 2.7 2.6 60 2.5 2.4 2.3 40 2.2 20 2.1 2.0 1 COLLECTOR FIGURE 16. FORWARD TRANSADMITTANCE (Y COLLECTOR CURRENT T -10 A ...

Page 7

... For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 CA3127 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ...

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