NP0G3D2 Panasonic Semiconductor, NP0G3D2 Datasheet
NP0G3D2
Related parts for NP0G3D2
NP0G3D2 Summary of contents
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... Transistors with built-in Resistor NP0G3D2 Silicon PNP epitaxial planar transistor (Tr1) Silicon NPN epitaxial planar transistor (Tr2) For digital circuits ■ Features • Two elements incorporated into one package • Suitable for high density package and downsizing of the equipment • Automatic insertion with the taping is possible ■ ...
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... NP0G3D2 ■ Electrical Characteristics T • Tr1 Parameter Collector to base voltage Collector to emittter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage High level output voltage Low level output voltage Input resistance Resistance ratio Gain bandwidth product • ...
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... IN −10 = − 25° −1 − 0.1 − 0.2 − 0.4 − 0.6 − 0.8 −1.0 −1.2 −1.4 −1 Input voltage V IN SJH00051AED NP0G3D2 250 = − 75°C a 200 25°C −25°C 150 100 50 0 −1 −10 −100 ( mA ) Collector current I C ...
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... NP0G3D2 Characteristics charts of Tr2 1.0 mA 0.9 mA 0.8 mA 0 0 25° Collector to emitter voltage V CE MHz = 25° Collector to base voltage V ...
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Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...