NP0G3D2 Panasonic Semiconductor, NP0G3D2 Datasheet - Page 2

• Manufacturer Part Number: NP0G3D2
• Description: Silicon PNP(NPN) epitaxial planar transistor
• Manufacturer: Panasonic Semiconductor

NP0G3D2
■ Electrical Characteristics T
2
• Tr1
• Tr2
Collector to base voltage
Collector to emittter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
High level output voltage
Low level output voltage
Input resistance
Resistance ratio
Gain bandwidth product
Collector to base voltage
Collector to emittter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
High level output voltage
Low level output voltage
Input resistance
Resistance ratio
Gain bandwidth product
Common characteristics chart
140
120
100
80
60
40
20
0
0
Ambient temperature T
20
Parameter
Parameter
40
P
T
60
 T
80
a
100
a
( °C )
120
140
a
Symbol
Symbol
V
R
V
R
= 25°C ± 3°C
V
V
V
V
I
I
I
V
I
I
I
V
V
V
1
1
CE(sat)
CE(sat)
h
h
CBO
CBO
CEO
EBO
R
CEO
EBO
R
f
f
CBO
CEO
CBO
CEO
FE
OH
/ R
FE
OH
/ R
OL
OL
T
T
1
1
2
2
I
I
V
V
V
V
I
V
V
V
I
I
V
V
V
V
I
V
V
V
C
C
C
C
C
C
CB
CE
EB
CE
CC
CC
CB
CB
CE
EB
CE
CC
CC
CB
= −10 µA, I
= −2 mA, I
= −10 mA, I
= 10 µA, I
= 2 mA, I
= 10 mA, I
SJH00051AED
= −50 V, I
= −50 V, I
= −6 V, I
= −10 V, I
= −5 V, V
= −5 V, V
= −10 V, I
= 50 V, I
= 50 V, I
= 6 V, I
= 10 V, I
= 5 V, V
= 5 V, V
= 10 V, I
B
C
Conditions
Conditions
E
B
B
B
B
C
B
C
E
E
= 0
= 0
E
B
B
B
= 0
B
C
E
E
= 0.3 mA
= 0.5 V, R
= 2.5 V, R
= 0
= 0
= 0
= 5 mA
= −2 mA, f = 200 MHz
= 0
= 0
= − 0.3 mA
= − 0.5 V, R
= −2.5 V, R
= 0
= 0
= −5 mA
= 1 mA, f = 200 MHz
L
L
= 1 kΩ
= 1 kΩ
L
L
= 1 kΩ
= 1 kΩ
−30%
−30%
−4.9
Min
Min
−50
−50
4.9
0.8
80
50
50
20
0.47
Typ
Typ
150
4.7
1.0
22
80
− 0.25
+30%
+30%
− 0.1
− 0.5
− 0.2
− 0.2
Max
Max
0.25
400
0.1
0.5
2.0
0.2
1.2
MHz
MHz
Unit
Unit
mA
mA
µA
kΩ
µA
kΩ




V
V
V
V
V
V
V
V
V
V