NP0G3D2 Panasonic Semiconductor, NP0G3D2 Datasheet - Page 3

• Manufacturer Part Number: NP0G3D2
• Description: Silicon PNP(NPN) epitaxial planar transistor
• Manufacturer: Panasonic Semiconductor

Characteristics charts of Tr1
−90
−80
−70
−60
−50
−40
−30
−20
−10
10
0
1
0
Collector to emitter voltage V
0
I
Collector to base voltage V
B
= −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA
−2
−8
C
−4
I
C
ob
−16
 V
 V
−6
−24
CE
CB
−8
− 0.5 mA
T
f = 1 MHz
T
a
a
−32
= 25°C
−10
= 25°C
CB
CE
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
( V )
( V )
−12
−40
− 0.01
− 0.1
− 0.1
−10
−10
−1
−1
− 0.1
0
− 0.2
Collector current I
SJH00051AED
Input voltage V
− 0.4
V
25°C
−1
I
CE(sat)
− 0.6
O
T
a
 V
= 75°C
− 0.8
 I
−1.0
IN
−25°C
−10
IN
C
C
V
T
I
−1.2
C
( V )
( mA )
a
O
/ I
= 25°C
= −5 V
B
−1.4
= 10
−100
−1.6
−100
− 0.1
−10
250
200
150
100
−1
50
0
−1
−1
V
CE
= −10 V
Collector current I
Output current I
V
h
FE
IN
−10
−10
 I
 I
NP0G3D2
T
a
C
O
= 75°C
O
−25°C
C
25°C
V
T
( mA )
a
O
( mA )
= 25°C
= − 0.2 V
−100
−100
3